VISHAY SI4534DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4534DY-T1-GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)95pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)120mΩ@10V
Input Capacitance(Ciss)650pF
TypeN-Channel + P-Channel

Technical details

60V 8A 3V 2.3W 120mΩ@10V N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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