VISHAY SI4532CDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4532CDY-T1-GE3

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Specifications

Current - Continuous Drain(Id)6A
RDS(on)140mΩ@4.5V
Pd - Power Dissipation2.78W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)67pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)305pF
Gate Charge(Qg)9nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)340pF

Technical details

N-Channel+P-Channel Array 30V 6A 2.78W Surface Mount SO-8

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