VISHAY · FETs & Power MOSFETs · MPN SI4497DY-T1-GE3
No reviews yet — be the first to review VISHAY SI4497DY-T1-GE3.
| Gate Charge(Qg) | 90nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 995pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 7.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 995pF |
| RDS(on) | 4.6mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.685nF |
| Vgs | ±20V |
P-Channel 30V 36A 7.8W Surface Mount SO-8