VISHAY · FETs & Power MOSFETs · MPN SI4491EDY-T1-GE3
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 820pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.62nF |
P-Channel 30V 29A 3.1W Surface Mount SO-8