VISHAY · FETs & Power MOSFETs · MPN SI4490DY-T1-GE3
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 2.85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.56W |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
N-Channel 200V 2.85A 1.56W Surface Mount SOIC-8