VISHAY · FETs & Power MOSFETs · MPN SI4490DY-T1-E3
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
200V 4A 2V 3.1W 80mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS