VISHAY SI4488DY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4488DY-T1-E3

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 150V 5A 3.1W Surface Mount SO-8

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