VISHAY SI4483ADY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4483ADY-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)44.8nC@10V
Output Capacitance(Coss)715pF
Current - Continuous Drain(Id)13.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation2.9W
Reverse Transfer Capacitance (Crss@Vds)645pF
RDS(on)8.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.9nF
TypeP-Channel

Technical details

P-Channel 30V 13.5A 2.9W Surface Mount SO-8

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