VISHAY · FETs & Power MOSFETs · MPN SI4477DY-T1-GE3
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| Gate Charge(Qg) | 190nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 26.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 6.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 10.5mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.6nF |
20V 26.6A 1.5V 6.6W 10.5mΩ@2.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS