VISHAY SI4465ADY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4465ADY-T1-GE3

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Specifications

Gate Charge(Qg)55nC@4.5V
Drain to Source Voltage8V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)13.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation6.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)16mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 8V 13.7A 6.5W Surface Mount SO-8

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