VISHAY SI4465ADY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4465ADY-T1-E3

No reviews yet — be the first to review VISHAY SI4465ADY-T1-E3.

Specifications

Drain to Source Voltage8V
Gate Charge(Qg)85nC@4.5V
Current - Continuous Drain(Id)13.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation6.5W
RDS(on)16mΩ@1.8V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 8V 13.7A 6.5W Surface Mount SO-8

Related FETs & Power MOSFETs