VISHAY · FETs & Power MOSFETs · MPN SI4464DY-T1-GE3
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 260mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±20V |
N-Channel 200V 2.2A 2.5W Surface Mount SOIC-8