VISHAY · FETs & Power MOSFETs · MPN SI4464DY-T1-E3
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 260mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
200V 2.2A 4V 2.5W 260mΩ@6V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS