VISHAY · FETs & Power MOSFETs · MPN SI4463CDY-T1-GE3
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 840pF |
| Current - Continuous Drain(Id) | 18.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 830pF |
| RDS(on) | 14mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.25nF |
| Type | P-Channel |
20V 18.6A 1.4V 20W 14mΩ@2.5V 1 P-Channel P-Channel SOIC-8-150mil Single FETs, MOSFETs RoHS