VISHAY SI4459ADY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4459ADY-T1-GE3

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Specifications

Gate Charge(Qg)95nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)860pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)790pF
RDS(on)7.75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6nF
TypeP-Channel

Technical details

P-Channel 30V 29A 45W Surface Mount SO-8

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