VISHAY · FETs & Power MOSFETs · MPN SI4456DY-T1-GE3
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| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 3.5W;7.8W |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.67nF |
40V 33A 2.8V 3.8mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS