VISHAY · FETs & Power MOSFETs · MPN SI4456DY-T1-E3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 57nC@10V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 7.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 287pF |
| RDS(on) | 4.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.67nF |
| Type | N-Channel |
40V 33A 2.8V 7.8W 4.5mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS