VISHAY · FETs & Power MOSFETs · MPN SI4455DY-T1-E3
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| Gate Charge(Qg) | 23.2nC |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 295mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.19nF |
P-Channel 150V 3.1W Surface Mount SO-8