VISHAY · FETs & Power MOSFETs · MPN SI4451DY-T1-E3
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 120nC@4.5V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 8.25mΩ@4.5V |
| Number | 1 P-Channel |
12V 10A 800mV 1.5W 8.25mΩ@4.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS