VISHAY · FETs & Power MOSFETs · MPN SI4447DY-T1-GE3
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| Gate Charge(Qg) | 9nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 54mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 805pF |
P-Channel 40V 3.9A Surface Mount SO-8