VISHAY · FETs & Power MOSFETs · MPN SI4447DY-T1-E3
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| Gate Charge(Qg) | 9nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 72mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 805pF |
| Type | P-Channel |
40V 4.5A 2.2V 1.3W 72mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS