VISHAY · FETs & Power MOSFETs · MPN SI4435FDY-T1-GE3
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 12.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
| Type | P-Channel |
P-Channel 30V 12.6A 2.2W Surface Mount SO-8