VISHAY SI4434DY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4434DY-T1-E3

No reviews yet — be the first to review VISHAY SI4434DY-T1-E3.

Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.56W
RDS(on)155mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 250V 2.1A 1.56W Surface Mount SO-8

Related FETs & Power MOSFETs