VISHAY · FETs & Power MOSFETs · MPN SI4434ADY-T1-GE3
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 12.9nC@10V |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 170mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
250V 4.1A 4V 6W 170mΩ@7.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS