VISHAY · FETs & Power MOSFETs · MPN SI4431BDY-T1-GE3
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| Gate Charge(Qg) | 20nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.6nF |
30V 7.5A 1V 2.5W 30mΩ@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS