VISHAY SI4431BDY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4431BDY-T1-E3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC@5V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)50mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 30V 7.5A Surface Mount SO-8

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