VISHAY · FETs & Power MOSFETs · MPN SI4430BDY-T1-GE3
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| Gate Charge(Qg) | 36nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
30V 20A 1V 3W 4.5mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS