VISHAY · FETs & Power MOSFETs · MPN SI4430BDY-T1-E3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 36nC |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF |
| RDS(on) | 6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
30V 20A 3V 3W 6mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS