VISHAY · FETs & Power MOSFETs · MPN SI4427BDY-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 70nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
30V 12.6A 1.4V 2.5W 10.5mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS