VISHAY · FETs & Power MOSFETs · MPN SI4425BDY-T1-GE3
No reviews yet — be the first to review VISHAY SI4425BDY-T1-GE3.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 64nC@10V |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 10mΩ@10V;15mΩ@4.5V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 30V 11.4A Surface Mount SO-8