VISHAY · FETs & Power MOSFETs · MPN SI4425BDY-T1-E3
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| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 12mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
P-Channel 30V 11.4A 2.5W Surface Mount SO-8