VISHAY · FETs & Power MOSFETs · MPN SI4423DY-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 175nC@5V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 7.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 116pF |
20V 14A 900mV 1.9W 7.5mΩ@4.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS