VISHAY SI4421DY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4421DY-T1-E3

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Specifications

Gate Charge(Qg)125nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)13.5mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)-
Vgs±8V

Technical details

P-Channel 20V 14A 3W Surface Mount SO-8

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