VISHAY · FETs & Power MOSFETs · MPN SI4420BDY-T1-E3
No reviews yet — be the first to review VISHAY SI4420BDY-T1-E3.
| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 30V 9.5A 1.4W Surface Mount SOIC-8