VISHAY SI4413DDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4413DDY-T1-GE3

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Specifications

Gate Charge(Qg)114nC@10V
Operating Temperature --55℃~+125℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)5.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.78nF

Technical details

1.6V 5.5mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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