VISHAY SI4413ADY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4413ADY-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)95nC@5V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
RDS(on)11mΩ@4.5V
Number1 P-Channel
TypeP-Channel

Technical details

30V 15A 3V 3W 11mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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