VISHAY · FETs & Power MOSFETs · MPN SI4408DY-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 32nC@4.5V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
20V 14A 1V 1.6W 4.5mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS