VISHAY · FETs & Power MOSFETs · MPN SI4403CDY-T1-GE3
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| Gate Charge(Qg) | 90nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 13.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 15.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.38nF |
20V 13.4A 400mV 2.5W 15.5mΩ@4.5V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS