VISHAY SI4401DDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4401DDY-T1-GE3

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)10.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)291pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.007nF

Technical details

P-Channel 40V 10.2A 4W Surface Mount SO-8

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