VISHAY · FETs & Power MOSFETs · MPN SI4401BDY-T1-E3
No reviews yet — be the first to review VISHAY SI4401BDY-T1-E3.
| Gate Charge(Qg) | 40nC |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 14mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±20V |
P-Channel 40V 10.5A 2.9W Surface Mount SOIC-8