VISHAY · FETs & Power MOSFETs · MPN SI4386DY-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 11nC@4.5V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 9.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
30V 16A 2.5V 20W 9.5mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS