VISHAY · FETs & Power MOSFETs · MPN SI4368DY-T1-E3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 80nC@4.5V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 355pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.34nF |
N-Channel 30V 30A 3.5W Surface Mount SO-8