VISHAY SI4288DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4288DY-T1-GE3

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Specifications

Current - Continuous Drain(Id)7.4A
RDS(on)20mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)15pF
Number2 N-Channel
Input Capacitance(Ciss)580pF
Gate Charge(Qg)7.4nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)100pF

Technical details

N-Channel Array 40V 7.4A 2W Surface Mount SO-8

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