VISHAY · FETs & Power MOSFETs · MPN SI4228DY-T1-GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 18mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 790pF |
| Gate Charge(Qg) | 25nC@10V |
| Operating Temperature | -55℃~+150℃ |
8A 18mΩ@10V 2W 600mV 2 N-Channel SO-8 FET, MOSFET Arrays RoHS