VISHAY SI4214DDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4214DDY-T1-GE3

No reviews yet — be the first to review VISHAY SI4214DDY-T1-GE3.

Specifications

Current - Continuous Drain(Id)8.5A
RDS(on)19.5mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)86pF
Number2 N-Channel
Input Capacitance(Ciss)660pF
Gate Charge(Qg)14.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 8.5A 2W Surface Mount SO-8

Related FETs & Power MOSFETs