VISHAY SI4214DDY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4214DDY-T1-E3

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Specifications

Current - Continuous Drain(Id)8.5A
RDS(on)19.5mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)86pF
Number2 N-Channel
Input Capacitance(Ciss)660pF
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+150℃

Technical details

8.5A 19.5mΩ@10V 2W 2.5V 2 N-Channel SOP-8 FET, MOSFET Arrays RoHS

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