VISHAY SI4204DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4204DY-T1-GE3

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Specifications

Current - Continuous Drain(Id)19.8A
RDS(on)4.6mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)235pF
Number2 N-Channel
Input Capacitance(Ciss)2.11nF
Gate Charge(Qg)14.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 19.8A Surface Mount SO-8

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