VISHAY SI4202DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4202DY-T1-GE3

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Specifications

Current - Continuous Drain(Id)9.7A
Pd - Power Dissipation2.4W
RDS(on)14mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number2 N-Channel
Input Capacitance(Ciss)710pF
Gate Charge(Qg)5.4nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 9.7A 2.4W Surface Mount SO-8

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