VISHAY · FETs & Power MOSFETs · MPN SI4190BDY-T1-GE3
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| Output Capacitance(Coss) | 235pF |
|---|---|
| Pd - Power Dissipation | 8.4W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 95nC@10V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 10.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.15nF |
8.4W 100V 17A 2.5V 10.3mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS