VISHAY · FETs & Power MOSFETs · MPN SI4190ADY-T1-GE3
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 695pF |
| Current - Continuous Drain(Id) | 18.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.97nF |
| Type | N-Channel |
100V 18.4A 2.8V 6W 12mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS